2N1893 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N1893
Manufacturer

ST Microelectronics
ChipWorker Part#

CW71326268
Category

BJT Transistor, BJT
Package

TO-5-3
Description

Trans GP BJT NPN 80V 0.5A 3Pin TO-39 Bag
Documentation

Datasheet

2N1893 Global Supplier

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2N1893 Specifications

Attribute	Attribute Value

Part Number	2N1893
Manufacturer	ST Microelectronics
ChipWorker Part#	CW71326268
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-5-3
Voltage Rating (DC)	120 V
Current Rating	500 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	800 mW
Gain Bandwidth Product	70 MHz
Breakdown Voltage (Collector to Base)	120 V
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	40 @150mA, 10V
hFE Max	120
Input Power (Max)	800 mW
DC Current Gain (hFE)	80
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	800 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

DESCRIPTION
The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating.
■ GENERAL PURPOSE HIGH VOLTAGE DEVICE

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