2N2222 - Multicomp

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N2222
Manufacturer

Multicomp
ChipWorker Part#

CW8241054
Category

BJT Transistor, BJT
Package

TO-18
Description

Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Documentation

Datasheet

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2N2222 Specifications

Attribute	Attribute Value

Part Number	2N2222
Manufacturer	Multicomp
ChipWorker Part#	CW8241054
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-18
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	30.0 V
hFE Min	100
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
	expand all
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The 2N2222 from Multicomp is a through hole, silicon planar NPN low power bipolar transistors in TO-18 metal can package. This transistor is used for switching, linear DC power supply and VHF amplifier applications.
Collector emitter voltage (Vce) of 30V
Continuous collector current (Ic) of 800mA
Power dissipation of 500mW
Operating junction temperature range from -65°C to 200°C
Collector emitter saturation voltage of 1.6V at 500mA collector current
DC current gain 30 at Ic=500mA
Collector emitter breakdown voltage 30V

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