2N2222AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N2222AUB
Manufacturer

Microsemi
ChipWorker Part#

CW1724869
Category

BJT Transistor, BJT
Package

SMD-3
Description

2N2222 Series 50V 800mA 0.5W(1/2W) Surface Mount NPN Switching Transistor
Documentation

Datasheet

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2N2222AUB Specifications

Attribute	Attribute Value

Part Number	2N2222AUB
Manufacturer	Microsemi
ChipWorker Part#	CW1724869
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SMD-3
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N2222AUB GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

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