2N2905A - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N2905A
Manufacturer

ST Microelectronics
ChipWorker Part#

CW33745600
Category

BJT Transistor, BJT
Package

TO-5-3
Description

2N2905A Series PNP 60V 600mA 0.6W Through Hole Switching Transistor - TO-39-3
Documentation

Datasheet

2N2905A Global Supplier

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2N2905A Specifications

Attribute	Attribute Value

Part Number	2N2905A
Manufacturer	ST Microelectronics
ChipWorker Part#	CW33745600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-5-3
Voltage Rating (DC)	-60.0 V
Current Rating	-600 mA
Power Rating	800 mW
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	600 mW
Gain Bandwidth Product	200 MHz
Breakdown Voltage (Collector to Base)	-60.0 V (min)
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	100 @150mA, 10V
hFE Max	300
Input Power (Max)	600 mW
DC Current Gain (hFE)	50
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	600 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications.

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