2N3019S - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3019S
Manufacturer

Microsemi
ChipWorker Part#

CW193088189
Category

BJT Transistor, BJT
Package

TO-39-3
Description

Trans GP BJT NPN 80V 1A 3Pin TO-39
Documentation

Datasheet

2N3019S Global Supplier

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2N3019S Specifications

Attribute	Attribute Value

Part Number	2N3019S
Manufacturer	Microsemi
ChipWorker Part#	CW193088189
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39-3
Power Dissipation	800 mW
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @500mA, 10V
Input Power (Max)	800 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	800 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status

Product Description

This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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