2N4029 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4029
Manufacturer

Microsemi
ChipWorker Part#

CW40507155
Category

BJT Transistor, BJT
Package

TO-18-3
Description

Trans GP BJT PNP 80V 1A 3Pin TO-18
Documentation

Datasheet

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2N4029 Specifications

Attribute	Attribute Value

Part Number	2N4029
Manufacturer	Microsemi
ChipWorker Part#	CW40507155
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-18-3
Power Dissipation	0.5 W
Gain Bandwidth Product	150 MHz
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	100 @100mA, 5V
hFE Max	300
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

If your circuit"s specifications require a device that can handle high levels of voltage, Microsemi"s PNP 2N4029 general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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