2N4124G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4124G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW40265439
Category

BJT Transistor, BJT
Package

TO-92-3
Description

TO-92 NPN 25V 0.2A
Documentation

Datasheet

2N4124G Global Supplier

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2N4124G Specifications

Attribute	Attribute Value

Part Number	2N4124G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW40265439
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	300 MHz
Voltage Rating (DC)	25.0 V
Current Rating	200 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	25 V
Thermal Resistance	83.3℃/W (RθJC)
Continuous Collector Current	0.2A
hFE Min	120 @2mA, 1V
Input Power (Max)	625 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.5 W
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2018/01/15
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N4124G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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