2N4921G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4921G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11649092
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225 NPN 40V 1A
Documentation

Datasheet

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2N4921G Specifications

Attribute	Attribute Value

Part Number	2N4921G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11649092
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Frequency	3 MHz
Voltage Rating (DC)	40.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	40 V
Thermal Resistance	4.16℃/W (RθJC)
Continuous Collector Current	1A
hFE Min	30 @500mA, 1V
hFE Max	150
Input Power (Max)	30 W
DC Current Gain (hFE)	3
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30000 mW
	expand all
Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.
Features
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Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation - PD = 30 W @ TC = 25°C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement of PNP 2N4918, 2N4919, 2N4920
Pb-Free Packages are Available

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