2N4922G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4922G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9141815
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225 NPN 60V 1A
Documentation

Datasheet

2N4922G Global Supplier

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2N4922G Specifications

Attribute	Attribute Value

Part Number	2N4922G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9141815
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Frequency	3 MHz
Voltage Rating (DC)	60.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	4.16℃/W (RθJC)
Continuous Collector Current	1A
hFE Min	30 @500mA, 1V
hFE Max	150
Input Power (Max)	30 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30000 mW
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Size-Length	7.8 mm
Size-Width	2.66 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The 2N4922G is a 60V Silicon NPN Bipolar Plastic Medium Power Transistor designed for driver circuits, switching and amplifier applications.
Excellent safe operating area
Low saturation voltage
Excellent power dissipation due to thermo pad construction
High performance

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