2N5195 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5195
Manufacturer

ST Microelectronics
ChipWorker Part#

CW26560504
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT PNP 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

2N5195 Global Supplier

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2N5195 Specifications

Attribute	Attribute Value

Part Number	2N5195
Manufacturer	ST Microelectronics
ChipWorker Part#	CW26560504
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	2 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-4.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	20 @1.5A, 2V
hFE Max	80
Input Power (Max)	40 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

DESCRIPTION
The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
It is inteded for use in medium power linear and switching applications.
The complementary NPN type is 2N5192.
■ STMicroelectronics PREFERRED SALESTYPE
■ PNP TRANSISTOR
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

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