2N5551BU - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5551BU
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10477000
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk
Documentation

Datasheet

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2N5551BU Specifications

Attribute	Attribute Value

Part Number	2N5551BU
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10477000
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	300 MHz
Number of Positions	3 Position
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	160 V
hFE Min	80 @10mA, 5V
Input Power (Max)	625 mW
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-50 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
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