2N5884 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5884
Manufacturer

ON Semiconductor
ChipWorker Part#

CW93700393
Category

BJT Transistor, BJT
Package

TO-204
Description

TO-204-2 PNP 80V 25A
Documentation

Datasheet

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2N5884 Specifications

Attribute	Attribute Value

Part Number	2N5884
Manufacturer	ON Semiconductor
ChipWorker Part#	CW93700393
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-204
Voltage Rating (DC)	-80.0 V
Current Rating	-25.0 A
Polarity	Dual P-Channel
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	25A
hFE Min	20 @10A, 4V
hFE Max	100
Input Power (Max)	200 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
Features
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Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain
hFE = 20 (min) at IC = 10 Adc
High Current Gain Bandwidth Product
ft = 4.0 MHz (min) at IC = 1.0 Adc
Pb-Free Packages are Available

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