2N5886 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5886
Manufacturer

ON Semiconductor
ChipWorker Part#

CW135491717
Category

BJT Transistor, BJT
Package

TO-3
Description

TO-204-2 NPN 80V 25A
Documentation

Datasheet

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2N5886 Specifications

Attribute	Attribute Value

Part Number	2N5886
Manufacturer	ON Semiconductor
ChipWorker Part#	CW135491717
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Voltage Rating (DC)	80.0 V
Current Rating	25.0 A
Polarity	N-Channel
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	80.0 V
Continuous Collector Current	25A
hFE Min	20
hFE Max	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
	expand all
Material	Silicon
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
Features
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Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain
hFE = 20 (min) at IC = 10 Adc
High Current Gain Bandwidth Product
ft = 4.0 MHz (min) at IC = 1.0 Adc
Pb-Free Packages are Available

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