2N6039G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6039G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5882833
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 80V 4A
Documentation

Datasheet

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2N6039G Specifications

Attribute	Attribute Value

Part Number	2N6039G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5882833
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	80.0 V
Current Rating	4.00 A
Halogen Free Status	Halogen Free
Output Voltage	80 V
Output Current	4 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	83.3℃/W (RθJA)
Continuous Collector Current	4A
hFE Min	750 @2A, 3V
hFE Max	15000
Input Power (Max)	40 W
DC Current Gain (hFE)	15
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40 W
Input Voltage	5 V
	expand all
Size-Length	11.04 mm
Size-Width	2.66 mm
Size-Height	2.66 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
Features
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High DC Current Gain -
hFE = 2000 (Typ) @ IC = 2.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with Built-in Base-Emitter
Resistors to Limit Leakage Multiplication
Space-Saving High Performance-to-Cost Ratio
TO-225AA Plastic Package
Pb-Free Packages are Available

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