2N6043G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6043G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2456787
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 60V 8A
Documentation

Datasheet

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2N6043G Specifications

Attribute	Attribute Value

Part Number	2N6043G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2456787
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	8.00 A
Output Voltage	100 V
Output Current	8 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	57℃/W (RθJA)
Continuous Collector Current	8A
hFE Min	1000 @4A, 4V
hFE Max	20000
Input Power (Max)	75 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75000 mW
Input Voltage	2.8 V
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Size-Length	10.28 mm
Size-Width	4.83 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The 2N6043G is a 8A NPN medium-power Darlington Complementary Silicon Transistor designed for general-purpose amplifier and low-speed switching applications.
Monolithic construction with built-in base-emitter shunt resistors
High DC current gain (hFE = 2500 @ IC = 4A DC)
UL94V-0 Flammability rating

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