2N6107G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6107G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10477204
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 70V 7A
Documentation

Datasheet

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2N6107G Specifications

Attribute	Attribute Value

Part Number	2N6107G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10477204
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	10 MHz
Voltage Rating (DC)	-70.0 V
Current Rating	-7.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	70 V
Thermal Resistance	3.125℃/W (RθJC)
Continuous Collector Current	7A
hFE Min	30 @2A, 4V
hFE Max	150
Input Power (Max)	40 W
DC Current Gain (hFE)	4
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.
Features
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DC Current Gain Specified to 7.0 Amperes
hFE = 30-150 @ IC
hFE = 3.0 Adc 2N6111, 2N6288
hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
VCEO(sus) = 50 Vdc (Min) - 2N6109
VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
TO-220AB Compact Package
Pb-Free Packages are Available

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