2N6317 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6317
Manufacturer

Microsemi
ChipWorker Part#

CW61356333
Category

BJT Transistor, BJT
Package

TO-66
Description

Trans GP BJT PNP 60V 7A 3Pin(2+Tab) TO-66
Documentation

Datasheet

2N6317 Global Supplier

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2N6317 Specifications

Attribute	Attribute Value

Part Number	2N6317
Manufacturer	Microsemi
ChipWorker Part#	CW61356333
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-66
Power Dissipation	115 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	25 @2.5A, 4V
Input Power (Max)	90 W
Power Dissipation (Max)	115000 mW
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Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	Non-Compliant
Lead-Free Status

Product Description

%3Cp%3EThese%202N6317%20and%202N6318%20devices%20are%20an%20excellent%20choice%20for%20un-tuned%20amplifier%20applications.%C2%A0%20It%20is%20also%20ideal%20for%20general%20purpose%20power%20switch%20and%20amplifier%20applications.%20Microsemi%20also%20offers%20numerous%20other%20products%20to%20meet%20higher%20and%20lower%20power%20voltage%20regulation%20applications.%3C%2Fp%3E

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Ordering Information

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
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