2N6341 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6341
Manufacturer

ON Semiconductor
ChipWorker Part#

CW128548267
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-204-2 NPN 150V 25A
Documentation

Datasheet

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2N6341 Specifications

Attribute	Attribute Value

Part Number	2N6341
Manufacturer	ON Semiconductor
ChipWorker Part#	CW128548267
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	150 V
Current Rating	25.0 A
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	25A
hFE Min	30 @10A, 2V
hFE Max	120
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
Features
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High Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) 2N6338
VCEO(sus) = 150 Vdc (Min) - 2N6341
High DC Current Gain
hFE = 30 - 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ts = 1.0 µs (Max)
tf = 0.25 µs (Max)
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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