2N6387 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6387
Manufacturer

ON Semiconductor
ChipWorker Part#

CW122172230
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 60V 10A 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

2N6387 Global Supplier

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2N6387 Specifications

Attribute	Attribute Value

Part Number	2N6387
Manufacturer	ON Semiconductor
ChipWorker Part#	CW122172230
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	10.0 A
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	1000 @5A, 3V
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Plastic Medium-Power Silicon Transistors
These devices are designed for general-purpose amplifier and low-speed switching applications.
Features
• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc - 2N6387, 2N6388
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available

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