2N6491G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6491G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5314951
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 80V 15A
Documentation

Datasheet

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2N6491G Specifications

Attribute	Attribute Value

Part Number	2N6491G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5314951
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	5 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1.8 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	1.67℃/W (RθJC)
Continuous Collector Current	15A
hFE Min	20 @5A, 4V
hFE Max	150
Input Power (Max)	1.8 W
DC Current Gain (hFE)	5
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1800 mW
	expand all
Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.
Features
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DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc
Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491
High Current Gain--Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO-220AB Compact Package
Pb-Free Packages are Available

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