2N6990 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6990
Manufacturer

Microsemi
ChipWorker Part#

CW60318793
Category

BJT Transistor, BJT
Package

TO-116-14
Description

Trans GP BJT NPN 50V 0.8A 14Pin FPAK
Documentation

Datasheet

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2N6990 Specifications

Attribute	Attribute Value

Part Number	2N6990
Manufacturer	Microsemi
ChipWorker Part#	CW60318793
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	TO-116-14
Power Dissipation	1.5 W
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	100 @150mA, 10V
Input Power (Max)	400 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	400 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Design various electronic circuits with this versatile NPN 2N6990 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

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