2N720A - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N720A
Manufacturer

Microsemi
ChipWorker Part#

CW59654239
Category

BJT Transistor, BJT
Package

TO-206
Description

Trans GP BJT NPN 80V 0.5A 3Pin TO-18
Documentation

Datasheet

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2N720A Specifications

Attribute	Attribute Value

Part Number	2N720A
Manufacturer	Microsemi
ChipWorker Part#	CW59654239
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-206
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	40 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This specially engineered NPN 2N720A GP BJT from Microsemi comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

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