2SC5200OTU - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SC5200OTU
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5531044
Category

BJT Transistor, BJT
Package

TO-264-3
Description

Trans GP BJT NPN 250V 17A 150000mW 3Pin(3+Tab) TO-264 Tube
Documentation

Datasheet

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2SC5200OTU Specifications

Attribute	Attribute Value

Part Number	2SC5200OTU
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5531044
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Frequency	30 MHz
Number of Positions	3 Position
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	250 V
hFE Min	80 @1A, 5V
Input Power (Max)	150 W
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-50 ℃
Power Dissipation (Max)	150000 mW
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Size-Length	20 mm
Size-Width	5 mm
Size-Height	26 mm
Material	Silicon
Operating Temperature	-50℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and suitable for many different applications.
Excellent gain linearity for low THD
Complement to the 2SA1943/FJL4215
Wide SOA for reliable operation
High power dissipation (150W)
High frequency (30MHz)
High voltage (VCEO = 250V)

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