2SC6144SG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SC6144SG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41662306
Category

BJT Transistor, BJT
Package

TO-220F-3
Description

TO-220F-3FS NPN 50V 10A
Documentation

Datasheet

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2SC6144SG Specifications

Attribute	Attribute Value

Part Number	2SC6144SG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41662306
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220F-3
Frequency	330 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	25 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	10A
hFE Min	200
hFE Max	560
Input Power (Max)	25 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC6144SG GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.

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