2SD1918TLQ - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SD1918TLQ
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW50071909
Category

BJT Transistor, BJT
Package

TO-252-3
Description

CPT NPN 160V 1.5A
Documentation

Datasheet

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2SD1918TLQ Specifications

Attribute	Attribute Value

Part Number	2SD1918TLQ
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW50071909
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	80 MHz
Voltage Rating (DC)	160 V
Current Rating	1.50 A
Polarity	N-Channel, NPN
Power Dissipation	1 W
Gain Bandwidth Product	80 MHz
Breakdown Voltage (Collector to Emitter)	160 V
Continuous Collector Current	1.5A
hFE Min	120
hFE Max	120 @0.1A, 5V
Input Power (Max)	10 W
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	6.7 mm
Size-Width	5.8 mm
Size-Height	2.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

Power Transistor FeaturesHigh breakdown voltage.(BVCEO = 160V) * Low collector output capacitance. (Typ. 20pF at VCB = 10V) * High transition frequency.(fT = 80MHZ) * Complements the 2SB1275 / 2SB1236A.

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