2SD1953 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SD1953
Manufacturer

ON Semiconductor
ChipWorker Part#

CW648197933
Package

TO-126
Description

TO-126 NPN 120V 1.5A
Documentation

Datasheet

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2SD1953 Specifications

Attribute	Attribute Value

Part Number	2SD1953
Manufacturer	ON Semiconductor
ChipWorker Part#	CW648197933
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126
Polarity	NPN
Power Dissipation	1000 mW
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	1.5A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Product Lifecycle Status	Unknown
RoHS	Compliant with Exemption
ECCN Code	EAR99

Product Description

If you require a higher current gain value in your circuit, then the barrier strip 2SD1953 Darlington transistor, developed by ON Semiconductor, is for you. This product"s maximum continuous DC collector current is 6 A, while its minimum DC current gain is Solder Lug. It has a maximum collector emitter saturation voltage of 150 V V. This Darlington transistor array"s maximum emitter base voltage is 12-22 V, while its maximum base emitter saturation voltage is 30 V. Its maximum power dissipation is -40 to 105 mW. It has a maximum emitter base voltage of 12-22 V. This Darlington transistor array has an operating temperature range of -40 °C to 105 °C.

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