2ST501T - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2ST501T
Manufacturer

ST Microelectronics
ChipWorker Part#

CW94084241
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220 NPN 350V 4A
Documentation

Datasheet

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2ST501T Specifications

Attribute	Attribute Value

Part Number	2ST501T
Manufacturer	ST Microelectronics
ChipWorker Part#	CW94084241
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	NPN
Power Dissipation	100000 mW
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	4A
hFE Min	2000 @2A, 2V
Input Power (Max)	100 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	100000 mW
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Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Traditional transistors can produce low current gains. One of STMicroelectronics" NPN 2ST501T Darlington transistors can provide you with the much higher values you need. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 2000@2A@2 V. It has a maximum collector emitter saturation voltage of 1.5@2mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2@2mA@2A V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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