2STN1360 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STN1360
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10966125
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 NPN 60V 3A
Documentation

Datasheet

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2STN1360 Specifications

Attribute	Attribute Value

Part Number	2STN1360
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10966125
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Frequency	130 MHz
Voltage Rating (DC)	80.0 V
Current Rating	3.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.6 W
Gain Bandwidth Product	130 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	3A
hFE Min	160 @1A, 2V
Input Power (Max)	1.6 W
DC Current Gain (hFE)	280
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1600 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.8 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The 2STN1360 is a NPN fast-switching Power Transistor manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
Fast-switching speed
PNP complement is 2STN2360

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