2STR1160 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STR1160
Manufacturer

ST Microelectronics
ChipWorker Part#

CW23526070
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 60V 1A
Documentation

Datasheet

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2STR1160 Specifications

Attribute	Attribute Value

Part Number	2STR1160
Manufacturer	ST Microelectronics
ChipWorker Part#	CW23526070
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	1A
hFE Min	180 @500mA, 2V
hFE Max	180 @0.5A, 2V
Input Power (Max)	500 mW
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Size-Length	3.04 mm
Size-Width	1.6 mm
Size-Height	1.3 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The 2STR1160 is a NPN fast-switching Power Transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Surface-mount device in medium power package
PNP complementary to 2STR2160

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