ADUM4120BRIZ - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ADUM4120BRIZ
Manufacturer

ADI
ChipWorker Part#

CW86839165
Package

SOIC-6
Description

Driver 2.3A 1Out High and Low Side Inv/Non-Inv 6Pin SOIC W Tube
Documentation

Datasheet

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ADUM4120BRIZ Specifications

Attribute	Attribute Value

Part Number	ADUM4120BRIZ
Manufacturer	ADI
ChipWorker Part#	CW86839165
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOIC-6
Rise/Fall Time	18 ns
Number of Outputs	1 Output
Number of Channels	1 Channel
Power Dissipation	1000 mW
Isolation Voltage	5000 Vrms
Fall Time (Max)	12 ns
Fall Time (Max)	14 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status

Product Description

Product Details
The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc., iCoupler® technology to provide precision isolation. The ADuM4120/ADuM4120-1 provide 5 kV rms isolation in the 6-lead wide body SOIC package with increased creepage. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics, such as the combination of pulse transformers and gate drivers.
The ADuM4120/ADuM4120-1 operate with input supplies ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4120/ ADuM4120-1 offer the benefit of true, galvanic isolation between the input and the output.
Options exist for models with and without an input glitch filter. The glitch filter helps reduce the chance of noise on the input pin triggering an output.
As a result, the ADuM4120/ADuM4120-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of switching voltages.
**Applications**
Switching power supplies
IGBT/MOSFET gate drivers
Industrial inverters
Gallium nitride (GaN)/silicon carbide (SiC) power devices
### Features and Benefits
2.3 A peak output current (<2 Ω RDSON_x)
2.5 V to 6.5 V VDD1 input
4.5V to 35 V VDD2 output
UVLO at 2.3 V VDD1
Multiple UVLO options on VDD2
Grade A—4.4 V (typical) positive going threshold
Grade B—7.3 V (typical) positive going threshold
Grade C—11.3 V (typical) positive going threshold
Precise timing characteristics
79 ns maximum isolator and driver propagation delay falling edge (ADuM4120)
CMOS input logic levels
High common-mode transient immunity: 150 kV/μs
High junction temperature operation: 125°C
Default low output
Safety and regulatory approvals (pending)
UL recognition per UL 1577
5 kV rms for 1 minute SOIC long package
CSA Component Acceptance Notice 5A
VDE certificate of conformity (pending)
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIORM = 849 V peak
8 mm creepage
Wide body, 6-lead SOIC with increased creepage

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