APT100GT120JU2 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT100GT120JU2
Manufacturer

Microsemi
ChipWorker Part#

CW54509840
Category

IGBT Transistor, IGBT Module
Package

SOT-227
Description

Trans IGBT Module N-CH 1200V 140A 480000mW 4Pin SOT-227
Documentation

Datasheet

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APT100GT120JU2 Specifications

Attribute	Attribute Value

Part Number	APT100GT120JU2
Manufacturer	Microsemi
ChipWorker Part#	CW54509840
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	7.2nF @25V
Input Power (Max)	480 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	480000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this APT100GT120JU2 IGBT transistor from Microsemi. Its maximum power dissipation is 0.4 mW. It has a maximum collector emitter voltage of ±20 V. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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