APT10M07JVFR - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT10M07JVFR
Manufacturer

Microsemi
ChipWorker Part#

CW146158671
Category

MOSFET, MOSFET Transistor
Package

SOT-227
Description

Trans MOSFET N-CH 100V 225A 4Pin SOT-227
Documentation

Datasheet

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APT10M07JVFR Specifications

Attribute	Attribute Value

Part Number	APT10M07JVFR
Manufacturer	Microsemi
ChipWorker Part#	CW146158671
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227
Voltage Rating (DC)	100 V
Current Rating	225 A
Power Dissipation	700 W
Input Capacitance	21.6 nF
Gate Charge	1.05 µC
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	225 A
Rise Time	60 ns
Input Capacitance (Ciss)	18000pF @25V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700000 mW
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Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

As an alternative to traditional transistors, the APT10M07JVFR power MOSFET from Microsemi can be used to both amplify and switch electronic signals. Its maximum power dissipation is 700000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes power mos v technology. This N channel MOSFET transistor operates in enhancement mode.

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