APT150GN120J - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT150GN120J
Manufacturer

Microsemi
ChipWorker Part#

CW50662021
Category

IGBT Transistor, IGBT Module
Package

SOT-227
Description

Trans IGBT Chip N-CH 1200V 215A 625000mW 4Pin SOT-227
Documentation

Datasheet

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APT150GN120J Specifications

Attribute	Attribute Value

Part Number	APT150GN120J
Manufacturer	Microsemi
ChipWorker Part#	CW50662021
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227
Voltage Rating (DC)	1.20 kV
Current Rating	215 A
Power Dissipation	625000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	9.5nF @25V
Input Power (Max)	625 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This APT150GN120J IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.

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