APT200GN60J - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT200GN60J
Manufacturer

Microsemi
ChipWorker Part#

CW55642033
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
Documentation

Datasheet

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APT200GN60J Specifications

Attribute	Attribute Value

Part Number	APT200GN60J
Manufacturer	Microsemi
ChipWorker Part#	CW55642033
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Dissipation	682 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	14.1nF @25V
Input Power (Max)	682 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	682000 mW
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Size-Length	38.2 mm
Size-Width	25.4 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This fast-switching APT200GN60J IGBT transistor from Microsemi will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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