APT25GP120BDQ1G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT25GP120BDQ1G
Manufacturer

Microsemi
ChipWorker Part#

CW95330237
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 69A 417000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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APT25GP120BDQ1G Specifications

Attribute	Attribute Value

Part Number	APT25GP120BDQ1G
Manufacturer	Microsemi
ChipWorker Part#	CW95330237
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.20 kV
Current Rating	69.0 A
Power Dissipation	417000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	417 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	417000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure APT25GP120BDQ1G IGBT transistor from Microsemi will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 417000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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