APT25M100J - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT25M100J
Manufacturer

Microsemi
ChipWorker Part#

CW83317876
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227 N-CH 1000V 25A
Documentation

Datasheet

APT25M100J Global Supplier

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APT25M100J Specifications

Attribute	Attribute Value

Part Number	APT25M100J
Manufacturer	Microsemi
ChipWorker Part#	CW83317876
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	1.00 kV
Current Rating	25.0 A
Polarity	N-CH
Power Dissipation	545 W
Input Capacitance	9.84 nF
Gate Charge	305 nC
Drain to Source Voltage (Vds)	1000 V
Continuous Drain Current (Ids)	25.0 A
Rise Time	40 ns
Input Capacitance (Ciss)	9835pF @25V(Vds)
Fall Time	38 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	545W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Create an effective common drain amplifier using this APT25M100J power MOSFET from Microsemi. Its maximum power dissipation is 545000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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