APT30GT60BRDQ2G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT30GT60BRDQ2G
Manufacturer

Microsemi
ChipWorker Part#

CW45545021
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 64A 250000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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APT30GT60BRDQ2G Specifications

Attribute	Attribute Value

Part Number	APT30GT60BRDQ2G
Manufacturer	Microsemi
ChipWorker Part#	CW45545021
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	64.0 A
Power Dissipation	250000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	250 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The APT30GT60BRDQ2G IGBT transistor from Microsemi is the best electronic switch for fast switching. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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