APT35GN120L2DQ2G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT35GN120L2DQ2G
Manufacturer

Microsemi
ChipWorker Part#

CW66519633
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 1200V 94A 379000mW 3Pin(3+Tab) TO-264 MAX
Documentation

Datasheet

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APT35GN120L2DQ2G Specifications

Attribute	Attribute Value

Part Number	APT35GN120L2DQ2G
Manufacturer	Microsemi
ChipWorker Part#	CW66519633
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	1.20 kV
Current Rating	94.0 A
Power Dissipation	379000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	379 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	379000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You can use this APT35GN120L2DQ2G IGBT transistor from Microsemi as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 379000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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