APT50GS60BRDQ2G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT50GS60BRDQ2G
Manufacturer

Microsemi
ChipWorker Part#

CW79666870
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 93A 415000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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APT50GS60BRDQ2G Specifications

Attribute	Attribute Value

Part Number	APT50GS60BRDQ2G
Manufacturer	Microsemi
ChipWorker Part#	CW79666870
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	415000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	25 ns
Input Power (Max)	415 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	415000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The APT50GS60BRDQ2G IGBT transistor from Microsemi is the best electronic switch for fast switching. Its maximum power dissipation is 415000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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