APT70GR120B2 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT70GR120B2
Manufacturer

Microsemi
ChipWorker Part#

CW107298421
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

APT70GR120 Series 1200V 70A 544NC 961W NPT IGBT - TO-247-3
Documentation

Datasheet

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APT70GR120B2 Specifications

Attribute	Attribute Value

Part Number	APT70GR120B2
Manufacturer	Microsemi
ChipWorker Part#	CW107298421
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	961000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	961 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	961000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Use the APT70GR120B2 IGBT transistor from Microsemi as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 961000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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