APT75GN120LG - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT75GN120LG
Manufacturer

Microsemi
ChipWorker Part#

CW59600030
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 1200V 200A 833000mW 3Pin(3+Tab) TO-264
Documentation

Datasheet

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APT75GN120LG Specifications

Attribute	Attribute Value

Part Number	APT75GN120LG
Manufacturer	Microsemi
ChipWorker Part#	CW59600030
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	1.20 kV
Current Rating	200 A
Power Dissipation	833000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	833 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	833000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This APT75GN120LG IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 833000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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