APT75GN60LDQ3G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT75GN60LDQ3G
Manufacturer

Microsemi
ChipWorker Part#

CW59851127
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 600V 155A 536000mW 3Pin(3+Tab) TO-264
Documentation

Datasheet

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APT75GN60LDQ3G Specifications

Attribute	Attribute Value

Part Number	APT75GN60LDQ3G
Manufacturer	Microsemi
ChipWorker Part#	CW59851127
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Power Dissipation	536000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	536 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	536000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this APT75GN60LDQ3G IGBT transistor from Microsemi. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

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