APT77N60JC3 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT77N60JC3
Manufacturer

Microsemi
ChipWorker Part#

CW66630996
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227 N-CH 600V 77A
Documentation

Datasheet

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APT77N60JC3 Specifications

Attribute	Attribute Value

Part Number	APT77N60JC3
Manufacturer	Microsemi
ChipWorker Part#	CW66630996
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	600 V
Current Rating	77.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	30 mΩ
Polarity	N-CH
Power Dissipation	568 W
Threshold Voltage	2.1 V
Input Capacitance	13.6 nF
Gate Charge	640 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	77.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	13600pF @25V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	568W (Tc)
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Size-Length	38.2 mm
Size-Width	25.4 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

As an alternative to traditional transistors, the APT77N60JC3 power MOSFET from Microsemi can be used to both amplify and switch electronic signals. Its maximum power dissipation is 568000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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