APT80GA60LD40 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT80GA60LD40
Manufacturer

Microsemi
ChipWorker Part#

CW67596639
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 600V 143A 625000mW 3Pin(3+Tab) TO-264
Documentation

Datasheet

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APT80GA60LD40 Specifications

Attribute	Attribute Value

Part Number	APT80GA60LD40
Manufacturer	Microsemi
ChipWorker Part#	CW67596639
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Power Dissipation	625000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	625 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure APT80GA60LD40 IGBT transistor from Microsemi will make sure your circuit works properly. Its maximum power dissipation is 625000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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