ARF463AG - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ARF463AG
Manufacturer

Microsemi
ChipWorker Part#

CW58978265
Category

Transistor
Package

TO-247-3
Description

Trans RF MOSFET N-CH 500V 9A 3Pin(3+Tab) TO-247
Documentation

Datasheet

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ARF463AG Specifications

Attribute	Attribute Value

Part Number	ARF463AG
Manufacturer	Microsemi
ChipWorker Part#	CW58978265
Category	Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	81.36 MHz
Current Rating	9 A
Power Dissipation	180000 mW
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500V (min)
Rise Time	4.1 ns
Output Power	100 W
Gain	15 dB
Test Current	50 mA
Input Capacitance (Ciss)	1200pF @50V(Vds)
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180000 mW
Voltage Rating	500 V
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Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Ideal for radio frequency environments this ARF463AG RF amplifier from Microsemi is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 180000 mW. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 100 MHz. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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