AUIRF1010EZ - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRF1010EZ
Manufacturer

Infineon
ChipWorker Part#

CW16151300
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 84A
Documentation

Datasheet

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AUIRF1010EZ Specifications

Attribute	Attribute Value

Part Number	AUIRF1010EZ
Manufacturer	Infineon
ChipWorker Part#	CW16151300
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0068 Ω
Polarity	N-CH
Power Dissipation	140 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	84A
Rise Time	90 ns
Input Capacitance (Ciss)	2810pF @25V(Vds)
Fall Time	54 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140 W
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRF1010EZ is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Repetitive avalanche allowed up to Tjmax

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