AUIRF9Z34N - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRF9Z34N
Manufacturer

Infineon
ChipWorker Part#

CW12482893
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 55V 19A
Documentation

Datasheet

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AUIRF9Z34N Specifications

Attribute	Attribute Value

Part Number	AUIRF9Z34N
Manufacturer	Infineon
ChipWorker Part#	CW12482893
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	68 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	P-CH
Power Dissipation	68 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	19A
Rise Time	55 ns
Input Capacitance (Ciss)	620pF @25V(Vds)
Fall Time	41 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	68 W
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	16.51 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRF9Z34N is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The automotive MOSFET offers benchmark figure of merit performance and their design optimized to address key applications such as electric power steering, injection, micro hybrid and HEV.
175°C Operating temperature
Fully avalanche rated
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax
Automotive qualified
ESD sensitive device, take proper precaution while handling the device.

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