AUIRFR2905Z - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRFR2905Z
Manufacturer

Infineon
ChipWorker Part#

CW12727868
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 59A
Documentation

Datasheet

AUIRFR2905Z Global Supplier

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AUIRFR2905Z Specifications

Attribute	Attribute Value

Part Number	AUIRFR2905Z
Manufacturer	Infineon
ChipWorker Part#	CW12727868
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0111 Ω
Polarity	N-CH
Power Dissipation	110 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	59A
Rise Time	66 ns
Input Capacitance (Ciss)	1380pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	35 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The AUIRFR2905Z is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Repetitive avalanche allowed up to Tjmax

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