AUIRFR3710Z - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRFR3710Z
Manufacturer

Infineon
ChipWorker Part#

CW12360314
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 56A
Documentation

Datasheet

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AUIRFR3710Z Specifications

Attribute	Attribute Value

Part Number	AUIRFR3710Z
Manufacturer	Infineon
ChipWorker Part#	CW12360314
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	90 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-CH
Power Dissipation	140 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	56A
Rise Time	43 ns
Input Capacitance (Ciss)	2930pF @25V(Vds)
Fall Time	42 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRFR3710Z is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Repetitive avalanche allowed up to Tjmax

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