AUIRFR4620 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRFR4620
Manufacturer

Infineon
ChipWorker Part#

CW11294066
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 200V 24A
Documentation

Datasheet

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AUIRFR4620 Specifications

Attribute	Attribute Value

Part Number	AUIRFR4620
Manufacturer	Infineon
ChipWorker Part#	CW11294066
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	144 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.064 Ω
Polarity	N-CH
Power Dissipation	144 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	24A
Rise Time	22.4 ns
Input Capacitance (Ciss)	1710pF @50V(Vds)
Fall Time	14.8 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	144W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRFR4620 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax

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